Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT With Improved Performance Trade-Off

Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT With Improved Performance Trade-Off

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In silicon carbide (SiC) planar insulated-gate bipolar transistor (IGBT), a large distance between neighboring p-bodies is beneficial to enhance the on-state conductivity modulation, but will expose the gate oxide to high electric field in off-state.With p-bodies placed closer, the gate oxide field is reduced, but the conductivity modulation is suppressed.In MAYAN MAGIC LITE this work, a new SiC planar IGBT with oxide shield is proposed and studied by TCAD simulations.The proposed SiC IGBT achieves improved trade-off between on-state voltage drop $(V_{mathrm{ ON}})$ and maximum gate oxide electric field $(E_{ ext {ox-m}})$.

When a quite larger distance between neighboring p-bodies is adopted in the proposed SiC IGBT, Lip Balms a low $V_{mathrm{ ON}}$ is obtained, while the $E_{ ext {ox-m}}$ can be kept at a small value with the oxide shielding structures protecting the gate oxide.Switching characteristics are also studied, and the proposed SiC-IGBT delivers much better trade-off between turn-off energy loss $(E_{mathrm{ OFF}})$ and $V_{mathrm{ ON}}$ than the conventional SiC planar IGBT.